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SSF1526 데이터시트(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

부품명 SSF1526
상세설명  Advanced trench MOSFET process technology
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제조업체  SILIKRON [Silikron Semiconductor Co.,LTD.]
홈페이지  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF1526 데이터시트(HTML) 1 Page - Silikron Semiconductor Co.,LTD.

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SSF1526
©Silikron Semiconductor CO.,LTD.
2011.06.01
Version : 1.1
page 1 of 8
www.silikron.com
Main Product Characteristics:
Features and Benefits:
Description:
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
65
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
45
IDM
Pulsed Drain Current
260
PD @TC = 25°C
Power Dissipation
272
W
Linear Derating Factor
2
W/°C
VDS
Drain-Source Voltage
150
V
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy @ L=0.72mH
1.3
mJ
IAS
Avalanche Current @ L=0.72mH
1.9
A
TJ
TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
VDSS
150V
RDS(on)
22mohm(typ.)
ID
65A
TO220
Marking and pin
Assignment
Schematic diagram
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications


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