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SSF5508A 데이터시트(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

부품명 SSF5508A
상세설명  Advanced trench MOSFET process technology
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제조업체  SILIKRON [Silikron Semiconductor Co.,LTD.]
홈페이지  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

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SSF5508A
©Silikron Semiconductor CO.,LTD.
2011.01.12
Version : 3.6
page
1of 6
www.silikron.com
Main Product Characteristics:
VDSS
55V
RDS(on)
4.5mohm
(Typ)
ID
110A
Features and Benefits:
SSF5508A TOP View (TO263)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
110
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
440
ISM
Pulsed Source Current.(Body Diode)
440
PD @TC = 25°C
Power Dissipation③
205
W
Linear derating factor
2
W/
VDS
Drain-Source Voltage
55
V
VGS
Gate-to-Source Voltage
±20
V
dv/dt
Peak diode recovery voltage
35
v/ns
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
634
mJ
IAR
Avalanche Current @ L=0.3mH②
65
A
TJ
TSTG
Operating Junction and
Storage Temperature
Range
-55 to + 175
°C
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case
0.73
℃/W
RθJA
Junction-to-ambient (
t ≤ 10s)
50
℃/W


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