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NE33284A 데이터시트(PDF) 1 Page - NEC |
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NE33284A 데이터시트(HTML) 1 Page - NEC |
1 / 10 page © 1995 DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz • Gate Width: Wg = 280 µm ORDERING INFORMATION PART NUMBER SUPPLYING LEAD LENGTH FORM NE33284A-SL STICK L = 1.7 mm MIN. NE33284A-T1 Tape & reel L = 1.0 ±0.2 mm NE33284A-T1A ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS –3.0 V Drain Current ID IDSS mA Total Power Dissipation Ptot 165 mW Channel Temperature Tch 150 ˚ C Storage Temperature Tstg –65 to +150 ˚ C RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit Drain to Source Voltage VDS 23 V Drain Current ID 10 20 mA Input Power Pin 0 dBm Document No. P10874EJ2V0DS00 (2nd edition) (Previous No. TD-2369) Date Published October 1995 P Printed in Japan PACKAGE DIMENSIONS (Unit: mm) 1.78 ±0.2 1 L L 4 2 L L 3 0.5 TYP. U 1. Source 2. Drain 3. Source 4. Gate |
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