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SI4812BDY-E3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4812BDY-E3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 73038 S-83039-Rev. D, 29-Dec-08 Vishay Siliconix Si4812BDY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current (MOSFET and Schottky) IDSS VDS = 30 V, VGS = 0 V 0.004 0.100 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 0.7 10 VDS = 30 V, VGS = 0 V, TJ = 125 °C 3.0 20 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 9.5 A 0.013 0.016 Ω VGS = 4.5 V, ID = 7.7 A 0.0165 0.021 Forward Transconductancea gfs VDS = 15 V, ID = 9.5 A 45 S Schottky Diode Forward Voltagea VSD IS = 1.0 A, VGS = 0 V 0.45 0.50 V IS = 1.0 A, VGS = 0 V, TJ = 125 °C 0.33 0.42 Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 9.5 A 8.5 13 nC Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 2.6 Gate Resistance Rg 0.3 0.7 1.1 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 15 25 ns Rise Time tr 13 20 Turn-Off Delay Time td(off) 20 30 Fall Time tf 815 Source-Drain Reverse Recovery Time trr IF = 1.0 A, dI/dt = 100 A/µs 22 35 |
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