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SI4812BDY-E3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI4812BDY-E3
상세설명  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Document Number: 73038
S-83039-Rev. D, 29-Dec-08
Vishay Siliconix
Si4812BDY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
13
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
IDSS
VDS = 30 V, VGS = 0 V
0.004
0.100
mA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
0.7
10
VDS = 30 V, VGS = 0 V, TJ = 125 °C
3.0
20
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 9.5 A
0.013
0.016
Ω
VGS = 4.5 V, ID = 7.7 A
0.0165
0.021
Forward Transconductancea
gfs
VDS = 15 V, ID = 9.5 A
45
S
Schottky Diode Forward Voltagea
VSD
IS = 1.0 A, VGS = 0 V
0.45
0.50
V
IS = 1.0 A, VGS = 0 V, TJ = 125 °C
0.33
0.42
Dynamicb
Total Gate Charge
Qg
VDS = 15 V, VGS = 5 V, ID = 9.5 A
8.5
13
nC
Gate-Source Charge
Qgs
3
Gate-Drain Charge
Qgd
2.6
Gate Resistance
Rg
0.3
0.7
1.1
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
15
25
ns
Rise Time
tr
13
20
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
815
Source-Drain Reverse Recovery Time
trr
IF = 1.0 A, dI/dt = 100 A/µs
22
35


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