전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRFW 데이터시트(Datasheet) 2 Page - Fairchild Semiconductor

부품명 IRFW
상세내용  Avalanche Rugged Technology
PDF  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo 

   
 2 page
background image
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/ T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS=0V,ID=250
A
I
D=250
A
See Fig 7
V
DS=5V,ID=250
A
V
GS=20V
V
GS=-20V
V
DS=100V
V
DS=80V,TC=150
V
GS=10V,ID=7A
V
DS=40V,ID=7A
V
DD=50V,ID=14A,
R
G=12
See Fig 13
V
DS=80V,VGS=10V,
I
D=14A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J=25
,I
S=14A,VGS=0V
T
J=25
,I
F=14A
di
F/dt=100A/
s
ΟC
µ
O
4
O
5
ΟC
µ
µ
ΟC
O
4
O
4
O
4
O
4
O
1
ΟC
µ
ΟC
O
5
O
4
µ
µ
IRFW/I530A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
150
62
13
14
55
36
27
4.5
12.8
--
--
4.0
100
-100
10
100
0.11
--
790
175
72
40
40
110
80
36
--
--
10.25
610
--
--
--
109
0.41
14
56
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2mH, I
AS=14A, VDD=25V, RG=27
, Starting T
J =25
I
SD
14A, di/dt
350A/ s, V
DD
BV
DSS , Starting T J =25
Pulse Test : Pulse Width = 250 s, Duty Cycle
2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
oC
oC
µ
µ




Html 페이지

1  2  3  4  5  6  7 


데이터시트




링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl