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2SC3451_2014 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3451_2014 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3451 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.2A ; VCE=5V 15 50 hFE-2 DC current gain IC=6A ; VCE=5V 8 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 160 pF fT Transition frequency IC=1.2A ; VCE=10V 18 MHz Switching times ton Turn-on time 0.5 μs tstg Storage time 3.0 μs tf Fall time IC=7A;RL=28.6Ω IB1=1.4A; IB2=-2.8A VCC=200V 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 |
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