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74HCT541D 데이터시트(PDF) 9 Page - NXP Semiconductors |
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74HCT541D 데이터시트(HTML) 9 Page - NXP Semiconductors |
9 / 19 page 74HC_HCT541 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 — 15 April 2014 9 of 19 NXP Semiconductors 74HC541; 74HTC541 Octal buffer/line driver; 3-state [1] tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of outputs. tt transition time see Figure 6 [2] VCC = 2.0 V - 14 60 75 90 ns VCC = 4.5 V - 5 12 15 18 ns VCC = 6.0 V - 4 10 13 15 ns CPD power dissipation capacitance per package; VI =GND to VCC [3] -37 - - - pF 74HCT541 tpd propagation delay An to Yn; see Figure 6 [1] VCC = 4.5 V - 15 28 35 42 ns VCC = 5.0 V; CL =15pF - 12 - - - ns ten enable time OEn to Yn; see Figure 7 [1] VCC = 4.5 V - 21 35 44 53 ns tdis disable time OEn to Yn; see Figure 7 [1] VCC = 4.5 V - 21 35 44 53 ns tt transition time VCC = 4.5 V; see Figure 6 [2] - 5 12 15 18 ns CPD power dissipation capacitance per package; VI =GND to VCC 1.5 V [3] -39 - - - pF Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for test circuit, see Figure 8. Symbol Parameter Conditions Tamb = 25 C Tamb = 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) |
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