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2SD1196_2015 데이터시트(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1196_2015 데이터시트(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1196 DESCRIPTION ・ With TO-220 package ・ High DC current gain. ・ High current capacity and wide ASO. ・ Low saturation voltage. APPLICATIONS ・ Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 12 A 1.75 PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic |
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