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2SD1555_2015 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1555_2015 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD1555 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Emitter-base breakdown voltage IE=0.2A , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 3.0 5.0 V VBEsat Emitter-base saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF VF Diode forward voltage IF=5A 2.0 V tf Fall time ICP=4A ;IB1(end)=0.8A 0.5 1.0 μs |
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