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SI6963DQ-T1 데이터시트(PDF) 3 Page - Vishay Siliconix

부품명 SI6963DQ-T1
상세설명  Dual P-Channel 2.5-V (G-S) MOSFET
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI6963DQ-T1 데이터시트(HTML) 3 Page - Vishay Siliconix

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Si6963DQ
Vishay Siliconix
New Product
Document Number: 71812
S-20220—Rev. D, 01-Apr-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
0
3
6
9
12
15
0.00
0.04
0.08
0.12
0.16
0.20
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Crss
VDS = 10 V
ID = 3.5 A
ID - Drain Current (A)
VGS = 4.5 V
ID = 3.5 A
Gate Charge
On-Resistance vs. Drain Current
Qg - Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.04
0.08
0.12
0.16
0.20
02468
TJ = 25_C
ID = 3.5 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
TJ = 150_C
VGS = 2.5 V
0
400
800
1200
1600
2000
04
8
12
16
20
Coss
Ciss


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