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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF996S_2015 데이터시트(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF996S_2015 데이터시트(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 5 page  April 1991 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current (DC) − 30 mA ID(AV) average drain current − 30 mA IG1-S gate 1 source −±10 mA IG1-S gate 2 source −±10 mA Ptot total power dissipation up to Tamb =60 °C; note 1 − 200 mW Tstg storage temperature range −65 +150 °C Tj junction temperature − 150 °C Fig.2 Power derating curve. handbook, halfpage 0 200 0 100 200 MGE792 100 Tamb (°C) Ptot (mW) THERMAL CHARACTERISTICS Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; note 1 460 K/W |
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