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BF1210_2015 데이터시트(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1210_2015 데이터시트(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
10 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 10 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. Fig 13. Amplifier A: input admittance as a function of frequency; typical values Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. VDS(A) =5V; VG2-S =4V; VDS(B) =0V; ID(A) = 19 mA. Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values Fig 16. Amplifier A: output admittance as a function of frequency; typical values 001aaf487 f (MHz) 10 103 102 10−1 1 10 102 bis, gis (mS) 10−2 gis bis 001aaf488 f (MHz) 10 103 102 −10 −102 ϕfs (deg) −1 10 102 Yfs (mS) 1 Yfs ϕfs 001aaf489 −102 −10 −103 ϕrs (deg) 102 10 103 Yrs ( µS) 1 −1 f (MHz) 10 103 102 Yrs ϕrs 001aaf490 1 10-1 10 bos, gos (mS) 10-2 f (MHz) 10 103 102 bos gos |
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