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FDD9409_F085 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDD9409_F085 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page May 2014 ©2014 Fairchild Semiconductor Corporation FDD9409_F085 Rev. C4 www.fairchildsemi.com 1 FDD9409_F085 N-Channel PowerTrench® MOSFET 40 V, 90 A, 3.2 m Ω Features Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter Ratings Units VDSS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 V ID Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 90 A Pulsed Drain Current TC = 25°C See Figure 4 EAS Single-Pulse Avalanche Energy (Note 2) 101 mJ PD Power Dissipation 150 W Derate Above 25oC1 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 oC RθJC Thermal Resistance, Junction to Case 1 oC/W RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 52 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD9409 FDD9409_F085 D-PAK(TO-252) 13” 12mm 2500 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 44A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. D G S G S D TO-252 D-PAK (TO-252) For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging |
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