전자부품 데이터시트 검색엔진 |
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IRF7807VD1 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7807VD1 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7807VD1 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board 50% Duty Cycle, Rectangular
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. Rθ is measured at TJ approximately 90°C * Device are 100% tested to these parameters. Electrical Characteristics Parameter Symbol Min Typ Max Units Drain-Source Breakdown Voltage BVDSS 30 ––– ––– V Static Drain-Source On-Resistance RDS(on) ––– 17 25 m Ω Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V ––– ––– 100 µA ––– ––– 20 µA ––– ––– 2.0 mA Gate-Source Leakage Current IGSS ––– ––– ±100 nA Total Gate Charge* QG ––– 9.5 14 Pre-Vth Gate-Source Charge QGS1 ––– 2.3 ––– Post-Vth Gate-Source Charge QGS2 ––– 1.0 ––– Gate-to-Drain Charge QGD ––– 2.4 ––– Switch Charge (Qgs2 + Qgd)QSW ––– 3.4 5.2 Output Charge* QOSS ––– 12 16.8 VDS = 16V, VGS = 0 Gate Resistance RG 0.9 ––– 2.8 Ω Turn-On Delay Time td(on) ––– 6.3 ––– Rise Time tr ––– 1.2 ––– Turn-Off Delay Time td(off) ––– 11 ––– Fall Time tf ––– 2.2 ––– Diode Characteristics Parameter Symbol Min Typ Max Units Diode Forward Voltage V SD ––– ––– 0.5 ––– ––– 0.39 di/dt = 700A/µs V DD = 16V, VGS = 0V, ID = 15A T J = 25°C, IS = 1.0A ,VGS = 0Vdà Conditions V GS = 0V, ID = 250µA V GS = 4.5V, ID = 7.0A d V DS = VGS, ID = 250µA V DS = 30V, VGS = 0V V GS = ± 20V ––– Conditions V nC ns V DS = 24V, VGS = 0V V DS = 24V, VGS = 0V, TJ = 100°C Drain-Source Leakage Current I DSS V DS = 4.5V I D = 7.0A V DS = 16V T = 125°C, I S = 1.0A, VGS = OVd Resistive Load V DD = 16V, ID = 7.0V VGS = 5V, RG = 2Ω nC ns Reverse Recovery Charge f T J = 25°C, IS = 7.0A ,VDS = 16V di/dt = 100A/µs ––– t rr Reverse Recovery Time f ––– 51 Q rr ––– 51 |
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