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2SD1256-P 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 2SD1256-P
상세설명  NPN Transistors
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1256-P 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SD1256
Features
Satisfactory linearity of foward current transfer ratio hFE
Low collector to emitter saturation voltage VCE(sat)
Large collector current IC
Complementary to 2SB933
2.3
0.60+ 0.1
- 0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4 .60 +0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
130
Collector - Emitter Voltage
VCEO
80
Emitter - Base Voltage
VEBO
7
Collector Current - Continuous
IC
5
Collector Current - Pulse
ICP
10
Collector Power Dissipation
Tc = 25℃
40
Ta = 25℃
1.3
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
PC
W
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
130
Collector- emitter breakdown voltage
VCEO
Ic= 10 mA, IB= 0
80
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
7
Collector-base cut-off current
ICBO
VCB= 100 V , IE= 0
10
Emitter cut-off current
IEBO
VEB= 5V , IC=0
50
Collector-emitter saturation voltage
VCE(sat) IC=4 A, IB=200mA
0.5
Base - emitter saturation voltage
VBE(sat) IC=4 A, IB=200mA
1.5
hFE(1)
VCE= 2V, IC= 100mA
45
hFE(2)
VCE= 2V, IC= 2 A
60
260
Turn-on time
ton
0.5
Storage time
tstg
1.5
Fall time
tf
0.15
Transition frequency
fT
VCE= 10V, IC= 500mA,f=10MHz
30
MHz
IC = 2A, IB1 = 200mA, IB2 = –200mA,
VCC = 50V
us
DC current gain
V
V
uA
Classification of hfe(2)
Type
2SD1256-R
2SD1256-Q
2SD1256-P
Range
60-120
90-180
130-260


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