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2SD1006-M-HF 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1006-M-HF 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type SMD Type Transistors 1 hFE Classification(2) Features High collector to emitter voltage: VCEO 100V. www.kexin.com.cn Electrical Characteristics Ta = 25 *. PW 350us ,duty cycle 2% Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO 100 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO 100 V V e g a tl o v e s a b -r e tt i m E EBO 5 V I t n e rr u c r o t c e ll o C C 0.7 A I * ) e s l u p ( t n e rr u c r o t c e ll o C C(pu) 1.2 A P n o it a p i s s i d r e w o p l r o t c e ll o C c 2 W T e r u t a r e p m e t n o it c n u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 *. PW 10ms,duty cycle 50% 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 Type 2SD1006-M-HF 2SD1006-L-HF 2SD1006-K-HF Range 90-180 135-270 200-400 Marking HM F HL F HK F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 100 Collector- emitter breakdown voltage VCEO Ic=1 mA, IB= 0 100 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 5 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage * VCE(sat) IC=500 mA, IB=50mA 0.6 Base - emitter saturation voltage * VBE(sat) IC=500 mA, IB=50mA 1.5 Base - emitter voltage * VBE VCE= 10V, IC= 10mA 0.55 0.68 VCE= 1V, IC= 5mA 45 200 VCE= 1V, IC= 100mA 90 200 400 Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 10 pF Transition frequency fT VCE= 10V, IC= 10mA 90 MHz DC current gain * hFE V uA V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD1006-HF |
유사한 부품 번호 - 2SD1006-M-HF |
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유사한 설명 - 2SD1006-M-HF |
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