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UPC2713T 데이터시트(Datasheet) 1 Page - NEC

부품명 UPC2713T
상세내용  1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
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제조사  NEC [NEC]
홈페이지  http://www.nec.com/
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1.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
PART NUMBER
UPC2713T
PACKAGE OUTLINE
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICC
Circuit Current (no signal)
mA
9
12
15
GS
Small Signal Gain
dB
26
29
33
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
0.9
1.2
∆GS
Gain Flatness,
f = 0.1
∼0.8 GHz
±0.8
PSAT
Saturated Output Power
dBm
4
7
P1dB
Output Power at 1dB Compression Point
dBm
-4
NF
Noise Figure
dB
3.2
4.5
RLIN
Input Return Loss
dB
10
13
RLOUT
Output Return Loss
dB
6
9
ISOL
Isolation
dB
35
40
∆GT
Gain -Temperature Coefficient
dB/
°C
-0.016
RTH
Thermal Resistance (Junction to Ambient)
°C/W
200
The UPC2713T is a Silicon Monolithic integrated circuit manu-
factured using the NESAT III process. This device is suitable
for applications which require high gain and wide-band opera-
tion. It is designed for low cost gain stages in cellular radios,
GPS receivers, DBS tuners, PCN, and test/measurement
equipment.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
UPC2713T
DESCRIPTION
FEATURES
• FREQUENCY RESPONSE: 1.5 GHz
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 0.5 GHz, VCC = 5 V)
California Eastern Laboratories
0
0.5
1.0
1.5
35
30
25
20




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