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ADF4360-2 데이터시트(PDF) 6 Page - Analog Devices

부품명 ADF4360-2
상세설명  Integrated Synthesizer and VCO
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ADF4360-2
Data Sheet
Rev. C | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
−0.3 V to +3.9 V
AVDD to DVDD
−0.3 V to +0.3 V
VVCO to GND
−0.3 V to +3.9 V
VVCO to AVDD
−0.3 V to +0.3 V
Digital I/O Voltage to GND
−0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
−0.3 V to VDD + 0.3 V
REFIN to GND
−0.3 V to VDD + 0.3 V
Operating Temperature
Maximum Junction Temperature
150°C
CSP θJA Thermal Impedance
Paddle Soldered
50°C/W
Paddle Not Soldered
88°C/W
Lead Temperature, Soldering Reflow
260°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those included in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV; it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12,543 (CMOS) and 700 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.


유사한 부품 번호 - ADF4360-2_15

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