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MTB070P15J3-0-T3-G 데이터시트(PDF) 2 Page - Cystech Electonics Corp.

부품명 MTB070P15J3-0-T3-G
상세설명  P-Channel Enhancement Mode Power MOSFET
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제조업체  CYSTEKEC [Cystech Electonics Corp.]
홈페이지  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB070P15J3-0-T3-G 데이터시트(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C985J3
Issued Date : 2015.01.21
Revised Date :
Page No. : 2/9
MTB070P15J3
CYStek Product Specification
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-150
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @VGS=-10V, TC=25
°C
-21
Continuous Drain Current @VGS=-10V, TC=100
°C
ID
-14.9
Continuous Drain Current @VGS=-10V, TA=25
°C
-3.7
Continuous Drain Current @VGS=-10V, TA=100
°C
IDSM
-2.3
Pulsed Drain Current
IDM
-84 *1
Single Pulse Avalanche Current
IAS
-56
A
TC=25℃
94
*4
TC=100℃
PD
47
*4
TA=25℃
2.5
*3
Power Dissipation
TA=100℃
PDSM
1.0
*3
W
Single Pulse Avalanche Energy
EAS
784 *2
mJ
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
1.6
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : *1. Pulse width limited by safe operating area.
*2 . Tj=25
°C, VDD=-50V, L=0.5mH, VG=-10V.
*3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with
TA=25°C
.
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C
.
The value in any given application depends on the user’s specific board design, and the maximum temperature of
175°C may be used if the PCB allows it.
*4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It
is used to determined the current rating, when this rating falls below the package limit.
Characteristics (Tj=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-150
-
-
V
VGS=0V, ID=-250μA
VGS(th)
-0.7
-
-2.0
V
VDS = VGS, ID=-250μA
GFS
-
22.4
-
S
VDS =-15V, ID=-5.2A
IGSS
-
-
±
100
nA
VGS=±20V
IDSS
-
-
-1
VDS =-120V, VGS =0V
IDSS
-
-
-25
μA
VDS =-120V, VGS =0V, Tj=70
°C
*RDS(ON)
-
65
85
VGS =-10V, ID=-5.2A
*RDS(ON)
-
69
95
VGS =-4.5V, ID=-5A
Dynamic


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