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MTB070P15J3-0-T3-G 데이터시트(PDF) 2 Page - Cystech Electonics Corp. |
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MTB070P15J3-0-T3-G 데이터시트(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C985J3 Issued Date : 2015.01.21 Revised Date : Page No. : 2/9 MTB070P15J3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -150 Gate-Source Voltage VGS ±20 V Continuous Drain Current @VGS=-10V, TC=25 °C -21 Continuous Drain Current @VGS=-10V, TC=100 °C ID -14.9 Continuous Drain Current @VGS=-10V, TA=25 °C -3.7 Continuous Drain Current @VGS=-10V, TA=100 °C IDSM -2.3 Pulsed Drain Current IDM -84 *1 Single Pulse Avalanche Current IAS -56 A TC=25℃ 94 *4 TC=100℃ PD 47 *4 TA=25℃ 2.5 *3 Power Dissipation TA=100℃ PDSM 1.0 *3 W Single Pulse Avalanche Energy EAS 784 *2 mJ Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.6 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 °C/W Note : *1. Pulse width limited by safe operating area. *2 . Tj=25 °C, VDD=-50V, L=0.5mH, VG=-10V. *3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C . The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C . The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. *4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determined the current rating, when this rating falls below the package limit. Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -150 - - V VGS=0V, ID=-250μA VGS(th) -0.7 - -2.0 V VDS = VGS, ID=-250μA GFS - 22.4 - S VDS =-15V, ID=-5.2A IGSS - - ± 100 nA VGS=±20V IDSS - - -1 VDS =-120V, VGS =0V IDSS - - -25 μA VDS =-120V, VGS =0V, Tj=70 °C *RDS(ON) - 65 85 VGS =-10V, ID=-5.2A *RDS(ON) - 69 95 mΩ VGS =-4.5V, ID=-5A Dynamic |
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