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MTB110P10E3-0-UB-X 데이터시트(PDF) 4 Page - Cystech Electonics Corp.

부품명 MTB110P10E3-0-UB-X
상세설명  P-Channel Enhancement Mode Power MOSFET
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제조업체  CYSTEKEC [Cystech Electonics Corp.]
홈페이지  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB110P10E3-0-UB-X 데이터시트(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 4/8
MTB110P10E3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
10
20
30
40
50
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
-10V
-9V
-8V
-7V
-6V
-5V
VGS=-3V
VGS=-2.5V
VGS=-4V
VGS=-3.5V
Brekdown Voltage vs Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
100
-ID, Drain Current(A)
VGS=-3V
VGS=-4.5V
VGS=-10V
VGS=-2V
VGS=-2.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
0
4
8
12
16
20
-IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
50
100
150
200
250
300
350
400
450
500
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
ID=-11A
Drain-Source On-State Resistance vs Junction Tempearture
0
0.4
0.8
1.2
1.6
2
2.4
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
VGS=-10V, ID=-11A
RDS(ON)@Tj=25°C : 80mΩ typ.


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