MTB110P10J3 datasheet(2/9 Pages) CYSTEKEC

부품명	MTB110P10J3

상세설명	P-Channel Logic Level Enhancement Mode Power MOSFET

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제조업체	CYSTEKEC [Cystech Electonics Corp.]

홈페이지	http://www.cystekec.com

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2 / 9 page

CYStech Electronics Corp.

Spec. No. : C968J3

Issued Date : 2014.08.07

Revised Date :

Page No. : 2/9

MTB110P10J3

CYStek Product Specification

Absolute Maximum Ratings (TC=25C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-100

V

Gate-Source Voltage

VGS

±20

Continuous Drain Current @ TJ=175C, TC=25C, VGS=10V

(Note 1)

ID

-14

A

Continuous Drain Current @ TJ=175C,TC=100C, VGS=10V

(Note 1)

-10

Continuous Drain Current @TA=25C, VGS=10V

(Note 2)

IDSM

-3.3

Continuous Drain Current @TA=70C, VGS=10V

(Note 2)

-2.6

Pulsed Drain Current

(Note 3)

IDM

-56

Avalanche Current

(Note 3)

IAS

-35

Avalanche Energy @ L=0.1mH, ID=-35A, RG=25Ω

(Note 2)

EAS

61

mJ

Total Power Dissipation

TC=25C

(Note 1)

PD

50

W

TC=100C

(Note 1)

25

TA=25C

(Note 2)

PDSM

2.5

TA=70C

(Note 2)

1.6

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+175

C

Thermal Data

Parameter

Symbol

Typical

Maximum

Unit

Thermal Resistance, Junction-to-case

RθJC

2.7

3

C/W

Thermal Resistance, Junction-to-ambient, t≤10s (Note 2)

RθJA

15

18

Thermal Resistance, Junction-to-ambient, steady state

40

50

Note : 1

.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2

. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air

environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction

temperature of 150°C. The value in any given application depends on the user’s specific board design.

3

. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty

cycles to keep initial TJ=25°C.

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MTB110P10J3 데이터시트(PDF) 2 Page - Cystech Electonics Corp.

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