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SI2303BDS-3 데이터시트(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 SI2303BDS-3
상세설명  P-Channel Enhancement MOSFET
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
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MOSFET
P-Channel Enhancement MOSFET
SI2303BDS (KI2303BDS)
Typical Characterisitics
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
1
2
3
4
5
0
50
100
150
200
250
300
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
0
2
4
6
8
10
0
2
4
6
8
10
0
2
4
6
8
10
0
2
4
6
8
10
0
1
2
3
4
5
6
7
On-Resistance vs. Drain Current
s
c
it
s
ir
e
t
c
a
r
a
h
C
r
e
f
s
n
a
r
T
s
c
it
s
ir
e
t
c
a
r
a
h
C
t
u
p
t
u
O
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
TC = -55 C
125 C
5 V
VGS = 10 thru 6 V
2, 3 V
4 V
Gate Charge
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 1.7 A
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 1.7 A
TJ - Junction Temperature ( C)
VGS = 10 V
VGS = 4.5 V
25 C


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