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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI2307BDS 데이터시트(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2307BDS 데이터시트(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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4 / 5 page  SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) ■ Typical Characterisitics Source-Drain Diode Forward Voltage Threshold Voltage T J = 150 °C VSD - Source-to-Drain Voltage (V) 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 T J = 25 °C - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) I D = 3.2 A Time (s) TA = 25 °C 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 Safe Operating Area, Junction-to-Case Square Wave Pulse Duration (s) 100 1 0.1 1 10 100 0.001 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms 10 µs 100 µs 1 ms 10 s, 1 s DC, 100 s 0.01 Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
유사한 부품 번호 - SI2307BDS |
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유사한 설명 - SI2307BDS |
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