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SI2307DS-3 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2307DS-3 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 4 page SMD Type www.kexin.com.cn 2 MOSFET P-Channel Enhancement MOSFET SI2307DS (KI2307DS) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA,VGS=0V -30 V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1.0 V VGS=-10V, ID=-3A 64 80 VGS=-4.5V, ID=-2.5A 103 140 On state drain current *1 ID(ON) VGS=-10V, VDS=-5V -6 A Forward Transconductance *1 gFS VDS=-10V, ID=-3A 4.5 S Input Capacitance Ciss 565 Output Capacitance Coss 126 Reverse Transfer Capacitance Crss 75 Total Gate Charge Qg 10 15 Gate Source Charge Qgs 1.9 Gate Drain Charge Qgd 2 Turn-On DelayTime td(on) 10 20 Turn-On Rise Time tr 9 20 Turn-Off DelayTime td(off) 27 50 Turn-Off Fall Time tf 7 16 Maximum Body-Diode Continuous Current IS -1.25 A Diode Forward Voltage VSD IS=-1.25A,VGS=0 -1.2 V Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance *1 pF nC VGS=-10V, VDS=-15V, RL=15Ω,RGEN=6Ω ID=-1.0A VGS=0V, VDS=-15V, f=1MHz ns VGS=-15V, VDS=-15V, ID=-3A *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking Marking A7* -3.0 |
유사한 부품 번호 - SI2307DS-3 |
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유사한 설명 - SI2307DS-3 |
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