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SI2307DS-3 데이터시트(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 SI2307DS-3
상세설명  P-Channel Enhancement MOSFET
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2307DS-3 데이터시트(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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4
MOSFET
.
P-Channel Enhancement MOSFET
SI2307DS (KI2307DS)
Typical Characterisitics
0.01
0.10
1.00
0.01
0
1
8
12
2
6
10
500
0.1
10
100
0.1
1.0
10.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
–0.4
–0.2
0.0
0.2
0.4
0.6
–50
–25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
e
g
a
tl
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V
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c
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S
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t-
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c
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R
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V
d
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T
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
VSD
V
)
V
(
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GS – Gate-to-Source Voltage (V)
TJ – Temperature ( C)
Time (sec)
ID = –3 A
ID = 250 A
TA = 25 C
Single Pulse
TJ = 25 C
TJ = 150 C
2
10–3
10–2
0
0
5
0
1
1
10–1
10–4
100
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 130 C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
4


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