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SI2307DS-3 데이터시트(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2307DS-3 데이터시트(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 4 page SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET SI2307DS (KI2307DS) ■ Typical Characterisitics 0.01 0.10 1.00 0.01 0 1 8 12 2 6 10 500 0.1 10 100 0.1 1.0 10.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 e g a tl o V e c r u o S - o t- e t a G . s v e c n a t s i s e R - n O e g a tl o V d r a w r o F e d o i D n i a r D - e c r u o S r e w o P e s l u P e l g n i S e g a tl o V d l o h s e r h T Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD V ) V ( e g a tl o V n i a r D - o t- e c r u o S – GS – Gate-to-Source Voltage (V) TJ – Temperature ( C) Time (sec) ID = –3 A ID = 250 A TA = 25 C Single Pulse TJ = 25 C TJ = 150 C 2 10–3 10–2 0 0 5 0 1 1 10–1 10–4 100 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130 C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 4 。 。 。 。 。 |
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