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BCP4672 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP4672 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page BCP4672 2A, 60V NPN Epitaxial Silicon Transistor Elektronische Bauelemente 10-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCP4672 is designed for low frequency amplifier applications. MARKING CLASSIFICATION OF hFE Product Rank BCP4672-A BCP4672-B Range 120~240 200~400 PACKAGE INFORMATION Package MPQ LeaderSize SOT-89 1K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 2 A Collector Current (Pulse) 5 Total Power Dissipation PD 2 W Junction & Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 60 - - V IC= 50A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 50 - - V IC= 1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 6 - - V IE= 50A, IC=0 Collector cut-off current ICBO - - 100 nA VCB= 60V, IE=0 Emitter cut-off current IEBO - - 100 nA VEB= 5V, IC=0 Collector-emitter saturation voltage VCE(sat)* - 0.1 0.35 V IC= -1A, IB= 50mA DC current gain hFE* 120 - 400 VCE= 2V, IC= 500mA Transition frequency fT - 210 - MHz VCE= 2V, IC= 500mA, f=100MHz Collector output capacitance Cob - 25 - pF VCB= 10V, IE=0, f=1MHz *Measured under pulse condition. Pulse width≦380μs, Duty Cycle≦2%. A E C D B K H F G L J 1 2 3 4 SOT-89 4 6 7 2 Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.30 2.60 K 0.32 0.52 E 1.50 1.70 L 0.35 0.44 F 0.89 1.2 |
유사한 부품 번호 - BCP4672_15 |
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유사한 설명 - BCP4672_15 |
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