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ES25A 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 ES25A
상세설명  High Efficiency Recovery Rectifiers
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

ES25A 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  ES25A_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH ES25A_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
ES25A
600 V 2.0 Amp
High Efficiency Recovery Rectifiers
19-Jun-2013 Rev. C
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Glass passivated chip
MECHANICAL DATA
Case: Molded plastic SMA/DO-214AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750 method 2026
Polarity: Color band denotes cathode
Mounting position: Any
Weight: 0.064 gram
PACKAGE INFORMATION
Package
MPQ
Leader Size
SMA
5K
13’ inch
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
600
V
Maximum RMS Voltage
VRMS
420
V
Maximum DC Blocking Voltage
VDC
600
V
Maximum Average Forward Rectified TA=90°C
IF
2
A
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load
IFSM
60
A
Maximum Instantaneous Forward Voltage @ 2.0A
VF
1.7
V
TA=25°C
5
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA=100°C
IR
100
μA
Maximum Reverse Recovery Time
1
TRR
35
nS
Typical Thermal Resistance
3
RθJA
55
°C / W
Typical Junction Capacitance
2
CJ
50
pF
Operating & Storage Temperature
TJ,TSTG
-55~150
°C
Notes:
1. Reverse Recovery Time test condition:IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal Resistance junction to ambient.
SMA
A
B
E
G
D
F
C
H
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.24
1.65
E
-
0.203
B
3.99
4.60
F
4.80
5.28
C
2.50
2.90
G
0.76
1.52
D
1.98
2.44
H
0.15
0.305


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