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IRF520L 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF520L
상세설명  Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF520L 데이터시트(HTML) 1 Page - International Rectifier

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IRF520NS/L
HEXFET® Power MOSFET
PD -91340A
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
S
D
G
Description
5/13/98
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.1
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V…
9.7
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V…
6.8
A
IDM
Pulsed Drain Current
…
38
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
48
W
Linear Derating Factor
0.32
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
91
mJ
IAR
Avalanche Current

5.7
A
EAR
Repetitive Avalanche Energy

4.8
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l Advanced Process Technology
l Surface Mount (IRF520NS)
l Low-profile through-hole (IRF520NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
2
D
P ak
TO-26 2
VDSS = 100V
RDS(on) = 0.20Ω
ID = 9.7A


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