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IRF7530 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF7530
상세설명  Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7530 데이터시트(HTML) 2 Page - International Rectifier

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IRF7530
2
www.irf.com
Q Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
Q
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 1.3A, VGS = 0V
R
trr
Reverse Recovery Time
–––
19
29
ns
TJ = 25°C, IF = 1.3A
Qrr
Reverse RecoveryCharge
–––
13
20
nC
di/dt = 100A/µs
R
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
40
1.3
A
S When mounted on 1 inch square copper board, t<10 sec
S
D
G
T Starting TJ = 25°C, L = 2.6mH
RG = 25Ω, IAS = 5.0A. (See Figure 10)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
VVGS = 0V, ID = 250uA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.01
–––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.030
VGS = 4.5V, ID = 5.4A
R
–––
––– 0.045
VGS = 2.5V, ID = 4.6A
R
VGS(th)
Gate Threshold Voltage
0.60
–––
1.2
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
13
–––
–––
SVDS = 10V, ID = 5.4A
–––
–––
1.0
VDS = 16V, VGS = 0V
–––
–––
25
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -12V
Qg
Total Gate Charge
–––
18
26
ID = 5.4A
Qgs
Gate-to-Source Charge
–––
3.4
5.1
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
3.4
5.1
VGS = 4.5V
R
td(on)
Turn-On Delay Time
–––
8.5
–––
VDD = 10V
tr
Rise Time
–––
11
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
36
–––
RG = 6.0Ω
tf
Fall Time
–––
16
–––
RD = 10Ω
R
Ciss
Input Capacitance
––– 1310 –––
VGS = 0V
Coss
Output Capacitance
–––
180
–––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
150
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
R Pulse width ≤ 400µs; duty cycle ≤ 2%.


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