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IRFB59N10 데이터시트(PDF) 7 Page - International Rectifier

부품명 IRFB59N10
상세설명  Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFB59N10 데이터시트(HTML) 7 Page - International Rectifier

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IRFB/IRFS/IRFSL59N10D
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
ƒ
„
‚
RG
VDD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

*


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