IRFP250 datasheet(1/8 Pages) IRF

부품명	IRFP250

상세설명	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

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제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

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IRFP250N

HEXFET® Power MOSFET

10/09/00

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

30

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

21

A

IDM

Pulsed Drain Current

120

PD @TC = 25°C

Power Dissipation

214

W

Linear Derating Factor

1.4

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

315

mJ

IAR

Avalanche Current

30

A

EAR

Repetitive Avalanche Energy

21

mJ

dv/dt

Peak Diode Recovery dv/dt

8.6

V/ns

TJ

Operating Junction and

-55 to +175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.7

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient

–––

40

Thermal Resistance

www.irf.com

1

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

Description

VDSS = 200V

RDS(on) = 0.075Ω

ID = 30A

S

D

G

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements

TO-247AC

PD - 94008

유사한 부품 번호 - IRFP250

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	IRFP250	255Kb / 8P	N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET
Vishay Siliconix	IRFP250	1Mb / 11P	Power MOSFET 09-Jul-2021
Samsung semiconductor	IRFP250	518Kb / 7P	N-Channel Power Mosfets
Vishay Siliconix	IRFP250	522Kb / 10P	Power MOSFET 01-Jan-2022
Fairchild Semiconductor	IRFP250	669Kb / 8P	200V N-Channel MOSFET

More results

유사한 설명 - IRFP250

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRFR2605	345Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
	IRFRU024N	178Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??
	IRFP264	168Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)
	IRFL024N	110Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
	IRCZ34	130Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
	IRLZ34NSPBF	297Kb / 11P	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )
	IRFP254	162Kb / 6P	Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
	IRF1010NS	146Kb / 10P	Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??
	IRFR014	172Kb / 6P	Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
	IRF520N	116Kb / 8P	Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

More results

IRFP250 데이터시트(PDF) 1 Page - International Rectifier

IRFP250 데이터시트(HTML) 1 Page - International Rectifier

유사한 부품 번호 - IRFP250

유사한 설명 - IRFP250

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