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SMPB1060L 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page Elektronische Bauelemente SMPB1060L Voltage 60V,10.0 Amp Low VF Planar MOS Barrier Schottky Rectifier 28-May-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES Planar MOS Schottky technology Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction MECHANICAL DATA Case: TO-277B molded plastic body Polarity: Color band denotes cathode end Mounting position: ANY PACKAGE INFORMATION Package MPQ Leader Size TO-277B 3K 13 inch MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Symbol Rating Unit Maximum Recurrent Peak Reverse Voltage VRRM 60 V Working Peak Reverse Voltage VRSM 60 V Maximum DC Blocking Voltage VDC 60 V Maximum Average Forward Rectified Current IF 10 A Peak Forward Surge Current, 8.3 ms single half sine-wave IFSM 150 A Voltage Rate of Chance (Rated VR) dv/dt 10000 V / µs Typical Thermal Resistance RθJC 2 °C /W Operating and Storage Temperature Range TJ,TSTG -40~150 °C ELECTRICAL CHARACTERISTICS Parameter Symbol Typ. Max. Unit Test Condition 0.38 0.41 IF = 3A, TJ = 25°C 0.44 0.49 IF = 5A, TJ = 25°C 0.56 0.6 IF = 10A, TJ = 25°C Maximum Instantaneous Forward Voltage VF 0.54 - V IF = 10A, TJ = 125°C - 0.3 TJ=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage 2 IR - 15 mA TJ=100°C Typical Junction Capacitance 1 CJ 320 - pF NOTES: 1. Measured at 1MHz and applied reverse voltage of 5.0V D.C. 2. Pulse Test:Pulse Width = 300 µs, Duty Cycle ≦ 2.0%. TO-277B Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.40 6.60 G 0.85 0.95 B 0.90 1.10 H 3.90 4.10 C 5.70 5.90 I 0.25 REF. D 1.80 1.95 J 1.75 1.85 E 0.75 0.85 K 2.95 3.05 F 3.45 3.60 |
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