SSG9926N_15 datasheet(1/4 Pages) SECOS

부품명	SSG9926N

상세설명	N-Ch Enhancement Mode Power MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG9926N

6.9 A, 20 V, RDS(ON) 30 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

11-Jul-2013 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low RDS(on) trench technology.

Low thermal impedance.

Fast switching speed.

APPLICATIONS

White LED boost converters

Automotive Systems

Industrial DC/DC Conversion Circuits

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13’ inch

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

TA = 25°C

6.9

A

Continuous Drain Current

1

TA = 70°C

ID

5.4

A

Pulsed Drain Current

2

IDM

30

A

Continuous Source Current (Diode Conduction)

1

IS

2.8

A

TA = 25°C

2.1

W

Total Power Dissipation

1

T A = 70°C

PD

1.3

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

Thermal Resistance Ratings

t≦10 sec

62.5

°C / W

Thermal Resistance Junction-ambient (Max.)

1

Steady State

RθJA

110

°C / W

Notes

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

SOP-8

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

G

S

D

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