SSRF07N80SL_15 datasheet(1/5 Pages) SECOS

부품명	SSRF07N80SL

상세설명	N-Ch Enhancement Mode Power MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSRF07N80SL

7A , 800V , RDS(ON) 1.6

N-Ch Enhancement Mode Power MOSFET

15-Oct-2013 Rev. A

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ITO-220

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSRF07N80SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications .

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

800

V

Gate-Source Voltage

VGS

±30

V

TC=25°C

7

A

Continuous Drain Current

TC=100°C

ID

4.4

A

Pulsed Drain Current

IDM

28

A

TC=25°C

50

Total Power Dissipation

Derate above 25°C

PD

0.4

W

Single Pulse Avalanche Energy

1

EAS

534

mJ

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

RθJA

120

°C / W

Maximum Thermal Resistance Junction-Case

RθJC

2.5

°C / W

Notes:

1. L=30mH,IAS=5.5A, VDD=135V, RG=20 , Starting TJ =25°C

1

Gate

3

Source

2

Drain

A

M

J

K

L

G

F

B

N

D

E

C

H

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

14.60

16.50

H

2.70

4.00

B

9.50

10.50

J

0.90

1.50

C

12.60

14.00

K

0.50

0.95

D

4.30

5.10

L

2.34

2.74

E

2.30

3.2

M

2.40

3.60

F

2.30

3.10

N

φ 3.0

φ 3.4

G

0.30

0.75

유사한 부품 번호 - SSRF07N80SL_15

제조업체	부품명	데이터시트	상세설명
SeCoS Halbleitertechnol...	SSRF07N80SL	560Kb / 5P	N-Ch Enhancement Mode Power MOSFET

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유사한 부품 번호 - SSRF07N80SL_15

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