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SST2604 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 SST2604
상세설명  N-Channel Enhancement Mode Power Mos.FET
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SST2604 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SST2604
5.5A, 30V,RDS(ON) 45m
N-Channel Enhancement Mode Power Mos.FET
Ω
Description
The
RoHS Compliant Product
SST2604 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
Features
* Lower Gate Charge
* Fast Switching Characteristic
The SST2604 is universally used for all commercial-industrial applications.
15-Jun-2010 Rev. C
Page 1 of 4
D
D
G
D
D
S
2 6 0 4
Date Code
1
5
2
3
4
6
G
D
S
Drain-Source Voltage
0.016
20
5.5
4.4
2
-55~+150
3
20
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Continuous Drain Current,VGS@4.5V
Continuous Drain Current,VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
ID@TC=70
ID@TC=25
IDM
PD@TC=25
2
,
1
C
o
C
o
C
o
W / C
C
o
o
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
/W
C
Rthj-c
62.5
Max.
o
Gate-Source Voltage
Parameter
Symbol
Ratings
Unit
A
V
V
A
A
W
VDS
VGS
0
±
3
3
3
Absolute Maximum Ratings
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
* Small Footprint & Low Profile Package
Dimensions in millimeters
2.60
3.00
0.30
0.55
2.70
3.10
0
0.10 Max
0.7
1.45
1.40
1.80
0.45 REF
o
10
o
SOT-26
0.95REF
0.95REF
1.90REF
1.2 REF
0.60 REF


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