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SSY5829P_15 데이터시트(Datasheet) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSY5829P_15
상세내용  P-Channel Enhancement MOSFET
PDF  4 Pages
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제조사  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
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Elektronische Bauelemente
SSY5829P
-2.5 A, -20 V, RDS(ON) 0.110 
P-Channel Enhancement MOSFET
With Schottky Diode
14-Jan-2011 Rev. B
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
-0.4
-
-
V
VDS = VGS, ID = -250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS = 0V, VGS= ±8V
-
-
-1
VDS = -16V, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
-
-
-10
μA
VDS = -16V, VGS= 0V, TJ=55°C
On-State Drain Current
1
ID(ON)
-5
-
-
A
VDS = -5V, VGS= -4.5V
-
-
0.110
VGS= -4.5V, ID = -3.6A
Drain-Source On-State Resistance
1
RDS(ON)
-
-
0.160
VGS= -2.5V, ID = -3.0A
Forward Transconductance
1
gFS
-
3
-
S
VDS= -5V,,ID = -3.6A
Diode Forward Voltage
VSD
-
-0.70
-
V
IS= -1.6A, VGS=0V
Dynamic
2
Total Gate Charge
Qg
-
6.0
-
Gate-Source Charge
Qgs
-
0.80
-
Gate-Drain Charge
Qgd
-
1.30
-
nC
ID= -3.6A
VDS= -5V
VGS= -4.5V
Turn-On Delay Time
Td(ON)
-
6.5
-
Rise Time
Tr
-
20
-
Turn-Off Delay Time
Td(OFF)
-
31
-
Fall Time
Tf
-
21
-
nS
VDD= -5V
VGEN= -4.5V
RG= 6Ω
RL= 5Ω
SCHOTTKY
SPECIFICATIONS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
-
-
0.48
IF= 0.5A
Forward Voltage Drop
1
VF
-
-
0.4
V
IF= 0.5A, TJ=125°C
-
-
0.1
Vr= 30V
-
-
1
Vr= 30V, TJ=75°C
Maximum Reverse Leakage Current
IRM
-
-
10
mA
Vr= 30V, TJ=125°C
Junction Capacitance
CT
-
31
-
pF
Vr= 10V
Notes:
1.
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.




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