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ST303C1111 데이터시트(PDF) 8 Page - International Rectifier

부품명 ST303C1111
상세설명  INVERTER GRADE THYRISTORS Puk Version
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제조업체  IRF [International Rectifier]
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ST303C1111 데이터시트(HTML) 8 Page - International Rectifier

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ST303C..C Series
V
TM
Max. peak on-state voltage
2.16
I
TM
= 1255A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25°C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25°C, V
A
= 12V, Ra = 6
Ω, I
G
= 1A
Parameter
ST303C..C
Units
Conditions
On-state Conduction
1.44
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
V
0.56
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5
Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Switching
Parameter
ST303C..C
Units
Conditions
1000
A/µs
t
d
Typical delay time
0.83
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST303C..C
Units
Conditions
Blocking
500
V/
µs
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST303C..C
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
µs
t
q
Max. turn-off time (*)
10
30
W
T
J
= T
J
max, f = 50Hz, d% = 50
(*) t
q
= 10 to 20µs for 400 to 800V devices; t
q
= 15 to 30µs for 1000 to 1200V devices.
1.48
(I >
π x I
T(AV)
), T
J
= T
J
max.
0.57
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
T
J
= T
J
max, rated V
DRM
applied
T
J
= 25°C, V
A
= 12V, Ra = 6
To Order
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