N-Ch

P-Ch

20V

-20V

3.0A

-2.5A

IRF7106

PD - 9.1098B

Advanced Process Technology

Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized device

design for which HEXFET Power MOSFETs are well known, provides the designer

with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in an

application with dramatically reduced board space. The package is designed for

vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater

than 0.8W is possible in a typical PCB mount application.

D1

N-CHANNEL MOSFET

P-CHANNEL MOSFET

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

PRELIMINARY

Absolute Maximum Ratings

Parameter

Units

Max.

N-Channel

P-Channel

3.0

-2.5

2.5

-2.0

A

Pulsed Drain Current

10

-10

Power Dissipation

2.0

Linear Derating Factor

0.016

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

3.0

-3.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

W

W/°C

SO-8

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Junction-to-Ambient (PCB Mount)**

––––

––––

62.5

°C/W

** When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

Revision 3

69