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2SC4942 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SC4942 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 'DWD 6KHHW'(-9'6 2SC4942 (/(&75,&$/ &+$5$&7(5,67,&6 7D °°°°& Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 600 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 10 µA DC current gain hFE1 VCE = 5.0 V, IC = 0.1 A 30 55 120 − DC current gain hFE2 VCE = 5.0 V, IC = 0.5 A 5 10 − Collector saturation voltage VCE(sat) IC = 400 mV, IB = 80 mA 0.35 1.0 V Base saturation voltage VBE(sat) IC = 400 mV, IB = 80 mA 0.9 1.2 V Gain bandwidth product fT VCE = 5.0 V, IE = −50 mA 30 MHz Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 15 pF Turn-on time tON 0.1 0.5 µs Storage time tstg 4.0 5.0 µs Fall time tf IC = 0.5 A, VCC= 250 V IB1 = −IB2 = 0.1 A RL = 500 Ω 0.2 0.5 µs K)( &/$66,),&$7,21 Marking AA1 AA2 AA3 hFE1 30 to 60 40 to 80 60 to 120 7<3,&$/&+$5$&7(5,67,&6 7D °°°°& |
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