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KTX301E 데이터시트(Datasheet) 2 Page - KEC(Korea Electronics)

부품명 KTX301E
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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2002. 1. 24
2/2
KTX301E
Revision No : 1
Note) hFE Classification Y(4):120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-
-
-0.1
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
DC Current Gain
hFE (Note)
VCE=-6V, IC=-2
120
-
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-100 , IB=-10
-
-0.1
-0.3
V
Transition Frequency
fT
VCE=-10V, IC=-1
80
-
-
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1
-
4
7
Noise Figure
NF
VCE=-6V, IC=-0.1 , f=1 , Rg=10
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF(1)
IF=1mA
-
0.60
-
V
VF(2)
IF=10mA
-
0.72
-
VF(3)
IF=100mA
-
0.90
1.20
Reverse Current
IR
VR=80V
-
-
0.5
Total Capacitance
CT
VR=0, f=1
-
0.9
3.0
Reverse Recovery Time
trr
IF=10
-
1.6
4.0
TRANSISTOR Q1
DIODE D1




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