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KTX401E 데이터시트(Datasheet) 1 Page - KEC(Korea Electronics)

부품명 KTX401E
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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2002. 1. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTX401E
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
A1
B1
C
TESV
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
1
2
3
5
4
P
P
P5
+_
+_
+_
+_
+_
+_
+_
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
23
54
MARK SPEC
C
Type Name
h
Rank
FE
12
3
4
5
Marking
Type
KTX401E
KTX401E
Q1 hFE Rank : Y
Q1 hFE Rank : GR
Mark
CD
CE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
150
Base Current
IB
30
Collector Power Dissipation
PC
100
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
VRM
85
V
Reverse Voltage
VR
80
V
Maximum (Peak) Forward Current
IFM
300
Average Forward Current
IO
100
Surge Current (10mS)
IFSM
2
A
Power Dissipation
PD
-
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
TRANSISTOR Q1
DIODE D1




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