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PD16803 데이터시트(PDF) 3 Page - Renesas Technology Corp |
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PD16803 데이터시트(HTML) 3 Page - Renesas Technology Corp |
3 / 14 page © 1997 DATA SHEET MOS INTEGRATED CIRCUIT µPD16803 Document No. S11452EJ2V0DS00 (2nd edition) Date Published July 1997 N Printed in Japan MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in a power-saving mode. The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 Ω TYP. (VM = 5.0 V) RON2 = 2.0 Ω TYP. (VM = 12.0 V) • Low current consumption: IDD = 0.4 mA TYP. • Stop mode function that turns OFF all output transistors • Compact surface mount package: 20-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) 1 3 4 5 6 7 8 9 10 C1H C2L 1A 2A PGND VM1 VDD INC IN1 IN2 C1L C2H 1B 2B PGND VG VM2 DGND RX PS 2 20 18 17 16 15 14 13 12 11 19 |
유사한 부품 번호 - PD16803_15 |
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유사한 설명 - PD16803_15 |
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