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BAT42R0G 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAT42R0G 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page - Low forward voltage drop - Through-hole device type mounting - Hermetically sealed glasss - Compression bonded construction - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable SYMBOL UNIT PD mW VRRM V VR V IF(AV) mA IFSM A TJ , TSTG oC SYMBOL UNIT Breakdown Voltage BV V Maximum Peak Reverse Current IR nA Junction Capacitance CJ pF Reverse Recovery Time trr ns Document Number: DS_S1412008 Version: C14 BAT42 / BAT43 Taiwan Semiconductor Small Signal Product Hermetically Sealed Glass Fast Switching Schottky Barrier Diode FEATURES Power Dissipation Repetitive Peak Reverse Voltage PARAMETER Maximum DC Blocking Voltage DO-35 Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) V Operating and Storage Temperature Range PARAMETER 30 Average Forward Rectified Current Peak Forward Surge Current -1.00 -0.40 VR=1V, f=1.0MHz (Note 1) VR=25V BAT43 -1.00 0.26 0.33 500 7 (Typ) Note 1: Reverse recovery test conditions: IF=IR=10mA, IRR=1mA, RL=100Ω VALUE 200 30 30 200 4 -65 to +125 MIN MAX -0.65 -0.45 - VF 5 (Typ) Forward Voltage Drop All Types IR=100μA IF=200mA IF=10mA IF=50mA IF=200mA IF=2mA IF=15mA BAT42 |
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