SOLID STATE DEVICES, INC.

V

Drain to Source Breakdown Voltage

(VGS =0 V, ID = 250

µA)

-

-

RATING

SYMBOL

MIN

TYP

MAX

UNIT

50

Ω

Ω

Ω

Ω

Drain to Source on State Resistance

-

-

-

V

Gate Threshold Voltage

(VDS = VGS, ID = 250

µA)

-

4.0

2

Smho

Forward Transconductance

(VDS > ID(on) X RDS (on) Max, IDS=20 Amps)

35

-

15

Zero Gate Voltage Drain Current

-

-

-

-

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

-

-

100

100

-

-

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10 V

80% rated VDS

Rated ID

Qg

Qgs

Qgd

-

-

-

80

13

40

100

20

55

nsec

Turn on Delay Time

Rise Time

Turn off DelayTime

Fall Time

VDD =50%

rated VDS

rated ID

RG=9.1

Ω

tr

tf

-

-

-

-

20

35

65

40

40

70

130

80

V

1.47

1.6

-

Diode Reverse Recovery Time

Reverse Recovery Charge

70

40/35

150

-

IF = 10A

di/dt = 100A/

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS =0 Volts

VDS =25 Volts

f =1 MHz

Ciss

Coss

Crss

-

-

-

2600

700

260

2900

1100

275

pF

nsec

For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.

A

On State Drain Current

(VDS > ID(on) x RDS(on) Max, VGS = 10 V)

-

-

75

Diode Forvard Voltage

nC

nA

10

100

SFF75N05M

SFF75N05Z

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

NOTES:

1/ Maximum current limited by package, die rated at 75A.

ID=37.5A

ID=75A

ID=37.5A

13

15

19

15

17