SI7461DP_15 datasheet(2/13 Pages) VISHAY

부품명	SI7461DP

상세설명	P-Channel 60 V (D-S) MOSFET

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Si7461DP

www.vishay.com

Vishay Siliconix

S15-0015-Rev. I, 19-Jan-15

2

Document Number: 72567

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-1

-

-3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -60 V, VGS = 0 V

-

-1

μA

VDS = -60 V, VGS = 0 V, TJ = 70 °C

-

-10

On-State Drain Current a

ID(on)

VDS

≤ -5 V, VGS = -10 V

-40

-

A

Drain-Source On-State Resistance a

RDS(on)

VGS = -10 V, ID = -14.4 A

-

0.0115

0.0145

Ω

VGS = -4.5 V, ID = -12.6 A

-

0.0150

0.0190

Forward Transconductance a

gfs

VDS = -15 V, ID = -14.4 A

-

31

-

S

Diode Forward Voltage a

VSD

IS = -4.5 A, VGS = 0 V

-

-0.8

-1.2

V

Dynamic b

Total Gate Charge

Qg

VDS = -30 V, VGS = -10 V, ID = -14.4 A

-

121

190

nC

Gate-Source Charge

Qgs

-20

-

Gate-Drain Charge

Qgd

-32

-

Gate Resistance

Rg

-3

-

Ω

Turn-On Delay Time

td(on)

VDD = -30 V, RL = 30

Ω

ID

≅ -1 A, VGEN = -10 V, Rg = 6 Ω

-20

30

ns

Rise Time

tr

-20

30

Turn-Off Delay Time

td(off)

-

205

310

Fall Time

tf

-

90

135

Source-Drain Reverse Recovery Time

trr

IF = -4.5 A, dI/dt = 100 A/μs

-

45

70

유사한 부품 번호 - SI7461DP_15

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI7461DP-T1-E3	78Kb / 5P	P-Channel 60-V (D-S) MOSFET Rev. C, 15-Mar-04
	SI7461DP	202Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 12-Dec-05
	SI7461DP	379Kb / 12P	P-Channel 60 V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI7461DP_15

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI6459BDQ	78Kb / 5P	P-Channel 60-V (D-S) MOSFET Rev. A, 03-Nov-03
Bruckewell Technology L...	MSD30P06	544Kb / 5P	P-Channel 60-V (D-S) MOSFET
Analog Power	AM90P06-20B	367Kb / 5P	P-Channel 60-V (D-S) MOSFET
Analog Power	AM30P06-40D	350Kb / 5P	P-Channel 60-V (D-S) MOSFET
Vishay Siliconix	TP0610K	199Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 02-Jan-06
	SI3459DV	62Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 29-Nov-99
	SI6459DQ	60Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. D, 29-Nov-99
Analog Power	AM7461P	182Kb / 3P	P-Channel 60-V (D-S) MOSFET
Analog Power	AM7463P	357Kb / 5P	P-Channel 60-V (D-S) MOSFET
Vishay Siliconix	SI7461DP	202Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 12-Dec-05
Analog Power	AM90P06-08P	345Kb / 5P	P-Channel 60-V (D-S) MOSFET

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SI7461DP 데이터시트(PDF) 2 Page - Vishay Siliconix

SI7461DP 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI7461DP_15

유사한 설명 - SI7461DP_15

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