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ST300C08C0L 데이터시트(PDF) 2 Page - Vishay Siliconix |
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ST300C08C0L 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 9 page VS-ST300C Series www.vishay.com Vishay Semiconductors Revision: 25-Nov-13 2 Document Number: 94403 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 650 (320) A 55 (75) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1290 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 8000 t = 8.3 ms 8380 t = 10 ms 100 % VRRM reapplied 6730 t = 8.3 ms 7040 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 320 kA2s t = 8.3 ms 292 t = 10 ms 100 % VRRM reapplied 226 t = 8.3 ms 207 Maximum I2 t for fusing I2 t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2 s Low level value of threshold voltage VT(TO)1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.97 V High level value of threshold voltage VT(TO)2 (I > x I T(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.74 m High level value of on-state slope resistance rt2 (I > x I T(AV)), TJ = TJ maximum 0.73 Maximum on-state voltage VTM Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 , t r 1 μs TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA |
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