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STU612D 데이터시트(PDF) 5 Page - SamHop Microelectronics Corp. |
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STU612D 데이터시트(HTML) 5 Page - SamHop Microelectronics Corp. |
5 / 11 page STU612D www.samhop.com.tw Mar,05,2009 5 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Qg, Total Gate Charge(nC) Figure 10. Gate Charge Rg, Gate Resistance( Ω) Figure 11. switching characteristics VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area 120 90 0 2 4 6 8 10 0 ID=8.6A 60 30 180 150 125 C 25 C 75 C 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 1200 1000 800 600 400 200 0 C is s C os s C rs s 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 V DS =30V ID=8.6A 10 1 0.1 0.1 100 1 10 100 R DS (O N) Li m it V GS =10V S ingle P uls e T c=25 C 1m s 10 0u s 10 m s DC Ver 1.0 0 5 10 15 20 25 30 125 C 25 C 75 C 1 10 100 60 100 10 1 300 6 V DS =30V ,ID=1A V G S =10V Tr TD(off) Tf 10 m s TD(on) |
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