전자부품 데이터시트 검색엔진 |
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2N3701 데이터시트(PDF) 1 Page - Central Semiconductor Corp |
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2N3701 데이터시트(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page 2N3700 2N3701 SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 1.0 A Power Dissipation (TC=25°C) PD 1.8 W Power Dissipation PD 500 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 350 °C/W Thermal Resistance ΘJC 97.2 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V - 10 - 10 nA ICBO VCB=90V, TA=150°C - 10 - 10 μA IEBO VEB=5.0V - 10 - 10 nA BVCBO IC=100μA 140 - 140 - V BVCEO IC=30mA 80 - 80 - V BVEBO IE=100μA 7.0 - 7.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.2 - 0.2 V VCE(SAT) IC=500mA, IB=50mA - 0.5 - 0.5 V VBE(SAT) IC=150mA, IB=15mA - 1.1 - 1.1 V hFE VCE=10V, IC=0.1mA 50 - 30 100 hFE VCE=10V, IC=10mA 90 - 40 120 hFE VCE=10V, IC=150mA 100 300 40 120 hFE VCE=10V, IC=150mA, TA=-55°C 40 - - - hFE VCE=10V, IC=500mA 50 - 30 100 hFE VCE=10V, IC=1.0A 15 - 15 - TO-18 CASE R1 (4-March 2014) www.centr a lsemi.com |
유사한 부품 번호 - 2N3701 |
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유사한 설명 - 2N3701 |
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