2N3740

2N3741

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N3740A

2N3741A

UNITS

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

4.0

A

Peak Collector Current

ICM

10

A

Continuous Base Current

IB

2.0

A

Power Dissipation

PD

25

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEV

VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741)

100

μA

ICEV

VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A)

100

nA

ICEV

VCE=40V, VBE=1.5V, TC=150°C (2N3740)

1.0

mA

ICEV

VCE=40V, VBE=1.5V, TC=150°C (2N3740A)

0.5

mA

ICEV

VCE=60V, VBE=1.5V, TC=150°C (2N3741)

1.0

mA

ICEV

VCE=60V, VBE=1.5V, TC=150°C (2N3741A)

0.5

mA

ICBO

VCB=Rated VCBO (2N3740, 2N3741)

100

μA

ICBO

VCB=Rated VCBO (2N3740A, 2N3741A)

100

nA

ICEO

VCE=40V (2N3740)

1.0

mA

ICEO

VCE=40V (2N3740A)

1.0

μA

ICEO

VCE=60V (2N3741)

1.0

mA

ICEO

VCE=60V (2N3741A)

1.0

μA

IEBO

VEB=7.0V (2N3740, 2N3741)

0.5

mA

IEBO

VEB=7.0V (2N3740A, 2N3741A)

100

nA

BVCEO

IC=100mA (2N3740, 2N3740A)

60

V

BVCEO

IC=100mA (2N3741, 2N3741A)

80

V

VCE(SAT) IC=1.0A, IB=125mA

0.6

V

VBE(ON)

VCE=1.0V, IC=250mA

1.0

V

hFE

VCE=1.0V, IC=100mA

40

hFE

VCE=1.0V, IC=250mA

30

200

hFE

VCE=1.0V, IC=500mA

20

hFE

VCE=1.0V, IC=1.0A

10

hfe

VCE=10V, IC=50mA, f=1.0kHz

25

fT

VCE=10V, IC=100mA, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=100kHz

100

pF

2N3740

2N3740A

2N3741

2N3741A

SILICON

PNP POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3740 series

devices are silicon PNP power transistors manufactured

by the epitaxial base process designed for power

amplifier and medium speed switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R2 (2-September 2014)

www.centr a lsemi.com