KF5N50DS_15 datasheet(1/6 Pages) KEC

부품명	KF5N50DS

상세설명	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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제조업체	KEC [KEC(Korea Electronics)]

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2011. 5. 23

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SEMICONDUCTOR

TECHNICAL DATA

KF5N50DS

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

FEATURES

・V

DSS= 500V, ID= 4.3A

・Drain-Source ON Resistance : R

DS(ON)=1.4Ω(Max) @VGS = 10V

・Qg(typ) = 12nC

・t

rr(typ) = 150nS

MAXIMUM RATING (Tc=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

@TC=25℃

ID

4.3

A

@TC=100℃

2.7

Pulsed (Note1)

IDP

13

Single Pulsed Avalanche Energy

(Note 2)

EAS

270

mJ

Repetitive Avalanche Energy

(Note 1)

EAR

8.6

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

20

V/ns

Drain Power

Dissipation

Tc=25

℃

PD

59.5

W

Derate above 25

℃

0.48

W/

℃

Maximum Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

RthJC

2.1

℃/W

Thermal Resistance, Junction-to-

Ambient

RthJA

110

℃/W

G

D

S

PIN CONNECTION

DPAK (1)

DIM MILLIMETERS

A

B

C

D

F

FF

H

G

K

G

J

L

K

L

M

0.96 MAX

0.90 MAX

E

M

N

H

0.70 MIN

O

Max 0.1

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

O

유사한 부품 번호 - KF5N50DS_15

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KEC(Korea Electronics)	KF5N50DS	69Kb / 6P	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF5N50DS 데이터시트(PDF) 1 Page - KEC(Korea Electronics)

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유사한 부품 번호 - KF5N50DS_15

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